Summer school on wide-bandgap nitride devices

Semiconductor power devices are a central part of any power conversion circuit and are ubiquitous in our daily lives: they transform voltages for a multitude of appliances, such as from the 220V AC mains to a 12V DC end-user appliance. Efficient power conversion systems are at the heart of the worldwide effort for a green economy, since they can minimize losses and save energy.

Systems employing wide bandgap semiconductors such as GaN-based devices allow for the implementation of electronics operating at high-switching speed, higher voltages, higher temperatures while maintaining high efficiencies. To unlock the full potential of GaN-based devises, we need to study and understand all the different aspects of the formed devices, from growing the raw material to packaging and a demonstration of its potential in a final device. In this course, we focus on two applications: high voltage power applications and densely integrated materials for CMOS drivers. The attendees will learn on the different aspects in creating such wide-bandgap devices:

  1. the challenges for growing wide bandgap materials and how semiconductor defects influence the final material.
  2. how the semiconductor material is being implemented in a final device, and how the processing can significantly improve the characteristics of the devices.
  3. how the fabricated devices can still fail, how to investigate these failures and how to categorise the degradation mechanisms.
  4. how a device is implemented in an consumer product, and the impact of specific ambient loads such as temperature on device performance.

Het Pand, Onderbergen 1, 9000 Gent08/07/2019 09:00 - 11/07/2019 16:0044

Additional Information

Will attend the full summer school (Yes / No). In case of partial attendence, please specify which dates you will attend.
Will join the company visit to ONSemiconductor
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